The global market for gallium nitride (GaN) semiconductor devices is
largely consolidated, with the top four companies commanding a share
of over 65% of the overall market in 2015, states Transparency Market
Research (TMR) in a new report. The dominant company among these four
top vendors, Efficient Power Conversion Corporation, accounted for a
19.2% share of the global market in the said year. The other three
topmost companies of the global market, which collectively enjoyed a
considerably large share in the overall global market in the said
year, are NXP Semiconductors N.V., GaN Systems Inc., and Cree Inc.
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Looking at the on-going research and development activities
undertaken in the market, attempts made to eliminate issues related
to reliability of GaN semiconductors is expected to be an important
area of focus of key vendors in the near future. Transparency Market
Research states that the global GaN semiconductor devices market will
expand at a high 17.0% CAGR over the period between 2016 and 2024.
With such exponential growth, the market, which had a valuation of
US$870.9 mn in 2015, is projected to rise to US$3,438.4 mn by 2024.
Of the key end-use industries utilizing GaN semiconductors, the
aerospace and defense sector dominates, accounting for a share of
over 42% of the global market in 2015.
Rising Set of Applications and Focus on R&D to Boost Demand in
North America and Europe
North America and Europe are presently the dominant regional markets
for GaN semiconductor devices and are expected to retain dominance
over the next few years as well. The rising focus of the Europe Space
Agency (ESA) on the increased usage of GaN semiconductors across
space projects and the use of GaN-based transistors in the military
and defense sectors in North America will help the GaN semiconductor
devices market gain traction.
In the past few years, GaN technology has witnessed rapid
advancements and vast improvement in the ability of GaN
semiconductors to work under operating environments featuring high
frequency, power density, and temperature with improved linearity and
efficiency. These advancements has boosted the usage of GaN
semiconductor devices across an increased set of applications and
have played an important role in the market’s overall growth
lately.
Along with this factor, the increased usage of GaN semiconductor
devices in the defense sector has also emerged as a key driver of the
global GaN semiconductor devices market. The continuous rise in
defense budgets of developing and developed countries as well as the
demand for inclusion of the technologically most advanced products in
the arsenal of national and international armies will propel the
global GaN semiconductor devices market in the near future.
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Relatively Higher Costs of GaN Semiconductor Devices to Hinder
Market Growth
GaN semiconductors are relatively expensive as compared to
silicon-based semiconductors owing to the high production costs of
gallium nitride as compared to silicon carbide. Further addition in
the cost of GaN semiconductors is ensued due to the high cost of
fabrication, packaging, and support electronics. Silicon-based
semiconductors have witnessed a significant decline in their costs
over the past few years, making high cost of GaN semiconductors a
foremost challenge that could hinder their large-scale adoption.
The issue can be tackled by producing GaN in bulk. However, there is
currently no widespread method that can be used for the purpose owing
to the requisition of high operating pressure and temperature and
limited scalability of the material.
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